 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(on) 4.5 4.0 IXTA/IXTP 3N120 IXTA/IXTP 3N110 1200 V 1100 V Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C 3N120 3N110 3N120 3N110 Maximum Ratings 1200 1100 1200 1100 20 30 3 12 3 20 700 5 150 -55 to +150 150 -55 to +150 V V V V D (TAB) TO-220 (IXTP) V V A A A mJ mJ V/ns W C C C C Features l l l G DS TO-263 (IXTA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 300 1.13/10 Nm/lb.in. 4 2 g g l International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3N120 3N110 1200 1100 2.5 4.5 100 TJ = 25C TJ = 125C 3N120 3N110 25 1 4.5 4.0 V V V nA A mA Advantages l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 Easy to mount Space savings High power density (c) 2001 IXYS All rights reserved 98844A (11/01) IXTA/IXTP 3N120 IXTA/IXTP 3N110 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.5 2.2 1050 1300 VGS = 0 V, VDS = 25 V, f = 1 MHz 100 125 25 17 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 4.7 (External), 15 32 18 39 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 9 22 0.8 (TO-220) 0.25 50 S pF pF pF ns ns ns ns nC nC nC K/W K/W Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side TO-220 (IXTP) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, Note 1 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3 12 1.5 700 A A V ns TO-263 (IXTA) Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = IS, -di/dt = 100 A/s, VR = 100 V Notes: 1. Pulse test, t 300 s, duty cycle d 2 % 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXTA/IXTP 3N120 IXTA/IXTP 3N110 5 TJ = 25OC 4.0 VGS = 9V 8V 7V 6V 3.5 5V 4 3.0 TJ = 125OC VGS = 9V 8V 7V 6V ID - Amperes ID - Amperes 3 2 1 0 2.5 2.0 1.5 1.0 5V 4V 0.5 4V 0.0 0 2 4 6 8 10 12 14 16 18 20 0 3 6 9 12 15 18 21 24 27 30 VDS - Volts VDS - Volts Fig.1 Output Characteristics @ Tj = 25C 2.50 VGS = 10V Fig. 2 Output Characteristics @ Tj = 125C 2.8 VGS = 10V TJ = 125OC 2.25 RDS(ON) - Normalized 2.5 2.00 1.75 1.50 1.25 1.00 0.75 0 1 2 3 4 5 TJ = 25OC RDS(ON) - Normalized 2.2 1.9 1.6 ID = 3A ID =1.5A 1.3 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 3 RDS(on) vs. Drain Current 4.0 3.5 3.0 IXT_3N120 IXT_3N110 Fig. 4 Temperature Dependence of Drain to Source Resistance 3.0 2.5 ID - Amperes ID - Amperes 2.5 2.0 1.5 1.0 0.5 0.0 2.0 1.5 TJ = 125oC 1.0 TJ = 25oC 0.5 0.0 3.5 -50 -25 0 25 50 75 100 125 150 4.0 4.5 5.0 5.5 6.0 T C - Degrees C VGS - Volts Fig. 5 Drain Current vs. Case Temperature Fig. 6 Drain Current vs Gate Source Voltage (c) 2001 IXYS All rights reserved IXTA/IXTP 3N120 IXTA/IXTP 3N110 12 Ciss f = 1MHz 10 VGS - Volts 8 6 4 2 0 0 10 20 30 40 50 60 Capacitance - pF VDS = 600V ID = 1.5A 1000 Coss 100 Crss 10 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Fig. 7 Gate Charge Characteristic Curve 5 VGS = 0V Fig. 8 Capacitance Curves 4 ID - Amperes 3 TJ = 125OC TJ = 25OC 2 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Fig. 9 Drain Current vs Drain to Source Voltage 1.00 R(th)JC - K/W 0.10 Single Pulse 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
Price & Availability of IXTA3N120
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |